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| Datasheet File OCR Text: |
| MSC8004 HIGH POWER GaAs FET FEATURES INCLUDE: * FET PACKAGE TYPE 30 High Output Power: P1dB = 1.6 W (TYP) @ 12 GHz High power gain: GLP = 5 dB (TYP) @ 12 GHz High power added efficiency: Hadd = 18% (TYP) @ 12 GHz * * APPLICATIONS: * S to Ku Band Power Amplifiers TRANS1.SYM ELECTRICAL SPECIFICATIONS SYMBOL IDDS VGS (off) VDS = 3.0 V VDS = 3.0 V TA = 25 C O TEST CONDITIONS SATURATED DRAIN CURRENT MINIMUM TYPICAL MAXIMUM 850 -2 1100 -3 1400 -5 UNITS mA V VGS = 0 V ID = 1.0 mA GATE TO SOURCE CUT-OFF VOLTAGE A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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